Title :
A Si BiCMOS transimpedance amplifier for 10-Gb/s SONET receiver
Author :
Kim, Helen H. ; Chandrasekhar, S. ; Burrus, Charles A., Jr. ; Bauman, Jon
Author_Institution :
Lucent Technol. Bell Labs., Holmdel, NJ, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
A transimpedance amplifier packaged with an InP p-i-n photodiode has been demonstrated for 10-Gb/s SONET receiver. The shunt feedback transimpedance amplifier is fabricated in 0.25-μm modular Si BiCMOS technology. The transimpedance of 55 dBΩ is achieved at a bandwidth of 9 GHz by applying shunt peaking and filter termination at the input. The optical sensitivity of -17 dBm was measured at 10 Gb/s for a bit-error rate of 10-12
Keywords :
BiCMOS analogue integrated circuits; SONET; elemental semiconductors; feedback amplifiers; optical fibre communication; optical receivers; p-i-n photodiodes; silicon; 0.25 micron; 10 Gbit/s; 9 GHz; BiCMOS; SONET receiver; Si; bandwidth; bit-error rate; filter termination; optical sensitivity; p-i-n photodiode; shunt feedback transimpedance amplifier; shunt peaking; transimpedance amplifier; Bandwidth; BiCMOS integrated circuits; Indium phosphide; Optical amplifiers; Optical feedback; Optical filters; Optical receivers; PIN photodiodes; Packaging; SONET;
Journal_Title :
Solid-State Circuits, IEEE Journal of
