DocumentCode :
1473867
Title :
Measurements of time-domain voltage/current waveforms at RF and microwave frequencies based on the use of a vector network analyzer for the characterization of nonlinear devices-application to high-efficiency power amplifiers and frequency-multipliers opt
Author :
Barataud, Denis ; Arnaud, Caroline ; Thibaud, Barbara ; Campovecchio, Michel ; Nebus, Jean-Michel ; Villotte, Jean Pierre
Author_Institution :
Fac. des Sci., IRCOM, Limoges, France
Volume :
47
Issue :
5
fYear :
1998
fDate :
10/1/1998 12:00:00 AM
Firstpage :
1259
Lastpage :
1264
Abstract :
A new time-domain waveform measurement system based on the combination of an harmonic source and load-pull setup with a modified vector network analyzer (VNA) is presented. It allows the visualization, the measurement, and the optimization of high-frequency currents and voltages at both ports of nonlinear microwave devices. Measurements of GaAs field effect transistor (FET´s) and GaInP/GaAs heterojunction bipolar transistor (HBT´s) at L-band were performed to demonstrate the great capabilities of the system. On one hand, voltage and current waveforms at both ports of transistors, working as power amplifiers, were optimized for maximum power-added efficiency. On the other hand, time-domain waveforms of transistors operating as frequency multipliers were optimized for maximum conversion gain. Such results prove the capabilities offered by this new nonlinear time-domain measurement system to aid in designing optimized power amplifiers or frequency multipliers. They also provide valuable information for nonlinear transistor model validation
Keywords :
electric current measurement; frequency multipliers; microwave frequency convertors; microwave measurement; microwave power amplifiers; network analysers; time-domain analysis; voltage measurement; waveform analysis; GaAs; GaAs field effect transistor; GaInP-GaAs; GaInP/GaAs heterojunction bipolar transistor; L-band; RF transistor; conversion gain; frequency multiplier; harmonic source; load-pull; microwave transistor; nonlinear device; optimization; power amplifier; power-added efficiency; time-domain waveform measurement; vector network analyzer; Current measurement; FETs; Gallium arsenide; Harmonic analysis; Microwave measurements; Power amplifiers; Radio frequency; Time domain analysis; Visualization; Voltage measurement;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/19.746594
Filename :
746594
Link To Document :
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