Title :
A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design
Author :
Knoblinger, Gerhard ; Klein, Peter ; Tiebout, Marc
Author_Institution :
Infineon Technol. AG, Munich, Germany
fDate :
5/1/2001 12:00:00 AM
Abstract :
In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a low noise amplifier in the gigahertz range
Keywords :
MOSFET; SPICE; hot carriers; semiconductor device models; semiconductor device noise; thermal noise; BSIM3v3 SPICE simulation; RF-CMOS design; analytical model; deep-submicron MOSFET; hot carrier effects; low noise amplifier; thermal channel noise; Analytical models; CMOS technology; Circuit noise; Frequency; Hot carrier effects; Integrated circuit noise; MOSFETs; Noise measurement; Semiconductor device modeling; Semiconductor device noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
