• DocumentCode
    1473916
  • Title

    Acoustic properties of the film/plate layered structure

  • Author

    Anisimkin, Vladimir I. ; Voronova, Natalia V.

  • Author_Institution
    Kotel´´nikov Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia
  • Volume
    58
  • Issue
    3
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    578
  • Lastpage
    584
  • Abstract
    A new propagation medium-a layered structure composed of a film and a plate-is suggested and studied, using c-oriented ZnO and AlN films on (001), {100}-Si plate, as two opposite examples of slow-on-fast and fast-on-slow material combinations. For both structures, the modes belonging to Lamb, quasi-longitudinal (QL), and Anisimkin Jr.´ (AN) families are found. For each family, the velocities vn, displacement profiles, and electromechanical coupling coefficients Kn2 for 4 electrode configurations are numerically calculated by the matrix method as a function of the mode order n = 0 to 8, plate thickness H/λ = 0 to 2.0, and film thickness h/λ = 0.02 to 0.04 (H and h are thicknesses; λ is the wavelength). Some high-order modes in the structure have Kn2 = 0 for any H/λ, h/λ, and electrode configuration. Other modes possess variable Kn2 with a maximum value larger than the coupling coefficient for the Rayleigh SAWs in ZnO and AlN single crystals or layered structures using the same films and semi-infinite silicon substrate. There are also QL-modes having high velocity vn, large Kn2, and low propagation loss caused by liquid loading. These modes are well suited for liquid sensors.
  • Keywords
    II-VI semiconductors; acoustic wave effects; aluminium compounds; semiconductor growth; semiconductor thin films; surface acoustic waves; wide band gap semiconductors; zinc compounds; AlN; Rayleigh SAW; ZnO; acoustic properties; c-oriented AlN films; c-oriented ZnO films; displacement profiles; electrode configuration; electromechanical coupling coefficients; film/plate layered structure; high-order modes; liquid sensors; semiinfinite silicon substrate; silicon plate; Acoustics; Couplings; Dispersion; Electrodes; Films; Silicon; Zinc oxide;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2011.1840
  • Filename
    5733259