DocumentCode :
1473916
Title :
Acoustic properties of the film/plate layered structure
Author :
Anisimkin, Vladimir I. ; Voronova, Natalia V.
Author_Institution :
Kotel´´nikov Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
578
Lastpage :
584
Abstract :
A new propagation medium-a layered structure composed of a film and a plate-is suggested and studied, using c-oriented ZnO and AlN films on (001), {100}-Si plate, as two opposite examples of slow-on-fast and fast-on-slow material combinations. For both structures, the modes belonging to Lamb, quasi-longitudinal (QL), and Anisimkin Jr.´ (AN) families are found. For each family, the velocities vn, displacement profiles, and electromechanical coupling coefficients Kn2 for 4 electrode configurations are numerically calculated by the matrix method as a function of the mode order n = 0 to 8, plate thickness H/λ = 0 to 2.0, and film thickness h/λ = 0.02 to 0.04 (H and h are thicknesses; λ is the wavelength). Some high-order modes in the structure have Kn2 = 0 for any H/λ, h/λ, and electrode configuration. Other modes possess variable Kn2 with a maximum value larger than the coupling coefficient for the Rayleigh SAWs in ZnO and AlN single crystals or layered structures using the same films and semi-infinite silicon substrate. There are also QL-modes having high velocity vn, large Kn2, and low propagation loss caused by liquid loading. These modes are well suited for liquid sensors.
Keywords :
II-VI semiconductors; acoustic wave effects; aluminium compounds; semiconductor growth; semiconductor thin films; surface acoustic waves; wide band gap semiconductors; zinc compounds; AlN; Rayleigh SAW; ZnO; acoustic properties; c-oriented AlN films; c-oriented ZnO films; displacement profiles; electrode configuration; electromechanical coupling coefficients; film/plate layered structure; high-order modes; liquid sensors; semiinfinite silicon substrate; silicon plate; Acoustics; Couplings; Dispersion; Electrodes; Films; Silicon; Zinc oxide;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2011.1840
Filename :
5733259
Link To Document :
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