Title :
A field-enhanced generation model for field emission from p-type silicon
Author :
Huang, Qing-An ; Qin, Ming ; Zhang, Bin ; Sin, Johnny K O ; Poon, M.C.
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
Field penetration into p-type silicon emitter creates a depletion region and causes the field emission current to he limited by the supply of electrons in the presence of a high electric field. A model is presented that takes field-enhanced generation within the depletion region into account, which may explain the nonlinear phenomenon in Fowler-Nordheim (F-N) plots of p-type silicon.
Keywords :
Poole-Frenkel effect; current density; electron field emission; elemental semiconductors; photocathodes; silicon; tunnelling; vacuum microelectronics; Fowler-Nordheim plots; Si; depletion region; emission current density; field emission; field emission photocathodes; field penetration; field-enhanced generation model; high electric field; nonlinear phenomenon; p-type Si; vacuum microelectronics; Cathodes; Electron emission; Flat panel displays; Impact ionization; Microelectronics; Silicon compounds; Solid state circuits; Space charge; Tunneling; Vacuum technology;
Journal_Title :
Electron Device Letters, IEEE
