Title :
Measurement and modeling of Si integrated inductors
Author :
Arcioni, Paolo ; Castello, Rinaldo ; De Astis, Giuseppe ; Sacchi, Enrico ; Svelto, Francesco
Author_Institution :
Dipt. di Elettronica, Pavia Univ., Italy
fDate :
10/1/1998 12:00:00 AM
Abstract :
This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performances of these integrated devices
Keywords :
S-parameters; elemental semiconductors; equivalent circuits; inductors; silicon; S-parameters; Si; lumped element model; parasitic effects; silicon substrate; spiral integrated inductor; wideband two-port measurement; CMOS process; CMOS technology; Conductivity; Inductors; Q factor; Semiconductor device measurement; Silicon; Spirals; Testing; Wideband;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
