Title :
Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs
Author :
Buttari, D. ; Chini, A. ; Meneghesso, G. ; Zanoni, E. ; Sawdai, D. ; Pavlidis, D. ; Hsu, S.S.H.
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fDate :
5/1/2001 12:00:00 AM
Abstract :
The hole multiplication factor in pnp InAlAs/InGaAs single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient /spl beta//sub p/ has been estimated taking into account the Early effect, I/sub CBO/, and thermal effects. Numerical corrections for dead space were made. The importance of considering second order effects is highlighted, showing that rough approximations can lead to an overestimation of the coefficient /spl beta//sub p/. At low electric fields, the extracted coefficient agrees with the most recent photomultiplication measurements available in the literature. At high electric fields, hole impact ionization coefficient is estimated up to values previously not reported in the literature (/spl beta//sub p//spl ap/10/sup 4/ cm/sup -1/).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; semiconductor device measurement; Early effect; InAlAs-InGaAs; base-collector bias; dead space; extracted coefficient; high electric fields; hole impact ionization coefficient; hole multiplication factor; photomultiplication measurements; pnp HBTs; second order effects; single heterojunction bipolar transistors; thermal effects; Bipolar transistors; Charge carrier processes; Electric variables measurement; Heterojunction bipolar transistors; Impact ionization; Indium compounds; Indium gallium arsenide; Performance evaluation; Solid state circuits; Voltage;
Journal_Title :
Electron Device Letters, IEEE
