Title :
Improved high-voltage lateral RESURF MOSFETs in 4H-SiC
Author :
Banerjee, S. ; Chatty, K. ; Chow, T.P. ; Gutmann, R.J.
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
5/1/2001 12:00:00 AM
Abstract :
High-voltage lateral RESURF metal oxide semiconductor field effect transistors (MOSFETs) in 4H-SiC have been experimentally demonstrated, that block 900 V with a specific on-resistance of 0.5 /spl Omega/-cm/sup 2/. The RESURF dose in 4H-SiC to maximize the avalanche breakdown voltage is almost an order of magnitude higher than that of silicon; however this high RESURF dose leads to oxide breakdown and reliability concerns in thin (100-200 nm) gate oxide devices due to high electric field (>3-4 MV/cm) in the oxide. Lighter RESURF doses and/or thicker gate oxides are required in SiC lateral MOSFETs to achieve highest breakdown voltage capability.
Keywords :
avalanche breakdown; power MOSFET; semiconductor device breakdown; semiconductor device reliability; semiconductor materials; silicon compounds; 100 to 200 nm; 4H-SiC; 900 V; HV lateral RESURF MOSFETs; RESURF dose; SiC; SiC lateral MOSFET; avalanche breakdown voltage; breakdown voltage capability; gate oxide thickness; high-voltage MOSFETs; oxide breakdown; reliability; Avalanche breakdown; Breakdown voltage; Conducting materials; FETs; Implants; Lead compounds; MOSFETs; Nitrogen; Silicon carbide; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
