Title :
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
Author :
Auer, U. ; Prost, W. ; Agethen, M. ; Tegude, F.-J. ; Duschl, R. ; Eberl, K.
Author_Institution :
Dept. of Solid-State Electron., Gerhard-Mercator-Univ., Duisburg, Germany
fDate :
5/1/2001 12:00:00 AM
Abstract :
Si/SiGe interband tunnelling diodes have been grown by MBE on high resistivity (n/sup -/) silicon substrates. The device enables a very low voltage, high-speed logic on a silicon substrate. A novel self-aligned diode is processed using optical lithography and dopant-selective wet chemical etching. A maximum speed index for a 60 μm2 anode area device is evaluated to 2.2 ns/V resulting in a switching speed of 0.5 ns. A logic latch built of two series connected diodes (MOBILE principle) is demonstrated, showing very robust logic operation at a supply voltage as low as 0.3 V. The used technology may be employed for a co-integration with both SiGe heterostructure bipolar- and field-effect transistor technology and may contribute to future low-voltage high speed logic on Si substrates.
Keywords :
Ge-Si alloys; elemental semiconductors; high-speed integrated circuits; integrated logic circuits; logic gates; low-power electronics; molecular beam epitaxial growth; negative resistance circuits; semiconductor materials; silicon; tunnel diodes; 0.3 V; 0.5 ns; LV MOBILE logic module; MBE growth; Si; Si-SiGe; Si/SiGe interband tunnelling diodes; SiGe HBT technology; SiGe HFT technology; dopant-selective wet chemical etching; high resistivity Si substrates; high-speed logic; logic latch; low-voltage logic module; monolithic co-integration; optical lithography; robust logic operation; self-aligned diode; series connected diodes; Chemical processes; Conductivity; Diodes; Germanium silicon alloys; High speed optical techniques; Lithography; Logic devices; Low voltage; Silicon germanium; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
