Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

Author

Babcock, Jeffrey A. ; Balster, Scott G. ; Pinto, Angelo ; Dirnecker, Christoph ; Steinmann, Philipp ; Jumpertz, Reiner ; El-Kareh, Badih

Author_Institution

Mixed-Signal-Products Process Dev. Group, Texas Instrum. Deutschland, Freising, Germany

Volume

22

Issue

5

fYear

2001

fDate

5/1/2001 12:00:00 AM

Firstpage

230

Lastpage

232

Abstract

The frequency dependence of PECVD nitride and LPCVD oxide metal-insulator-metal (MIM) capacitors is investigated with special attention for precision analog applications. At measurement frequencies of 1.0 MHz, nitride MIM capacitors show capacitance linearity close to that of oxide MIM capacitors, indicating potential for precision analog circuit applications. Due to dispersion effects, however, nitride MIM capacitors show significant degradation in capacitor linearity as the frequency is reduced, which leads to accuracy limitations for precision analog circuits. Oxide MIM capacitors are essentially independent of frequency.

Keywords

MIM devices; analogue integrated circuits; capacitance; capacitors; dielectric thin films; plasma CVD coatings; 1 MHz; PECVD nitride dielectrics; analog characteristics; capacitance linearity; dispersion effects; frequency dependence; metal-insulator-metal capacitors; nitride MIM capacitors; precision analog applications; Analog circuits; Capacitance measurement; Dielectrics; Frequency dependence; Frequency measurement; Linearity; MIM capacitors; Metal-insulator structures; Switched capacitor circuits; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.919238

Filename

919238