Title :
Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics
Author :
Babcock, Jeffrey A. ; Balster, Scott G. ; Pinto, Angelo ; Dirnecker, Christoph ; Steinmann, Philipp ; Jumpertz, Reiner ; El-Kareh, Badih
Author_Institution :
Mixed-Signal-Products Process Dev. Group, Texas Instrum. Deutschland, Freising, Germany
fDate :
5/1/2001 12:00:00 AM
Abstract :
The frequency dependence of PECVD nitride and LPCVD oxide metal-insulator-metal (MIM) capacitors is investigated with special attention for precision analog applications. At measurement frequencies of 1.0 MHz, nitride MIM capacitors show capacitance linearity close to that of oxide MIM capacitors, indicating potential for precision analog circuit applications. Due to dispersion effects, however, nitride MIM capacitors show significant degradation in capacitor linearity as the frequency is reduced, which leads to accuracy limitations for precision analog circuits. Oxide MIM capacitors are essentially independent of frequency.
Keywords :
MIM devices; analogue integrated circuits; capacitance; capacitors; dielectric thin films; plasma CVD coatings; 1 MHz; PECVD nitride dielectrics; analog characteristics; capacitance linearity; dispersion effects; frequency dependence; metal-insulator-metal capacitors; nitride MIM capacitors; precision analog applications; Analog circuits; Capacitance measurement; Dielectrics; Frequency dependence; Frequency measurement; Linearity; MIM capacitors; Metal-insulator structures; Switched capacitor circuits; Voltage;
Journal_Title :
Electron Device Letters, IEEE
