• DocumentCode
    1474167
  • Title

    A time-dependent, surface potential based compact model for MOS capacitors

  • Author

    Victory, James ; McAndrew, Colin C. ; Gullapalli, Kiran

  • Author_Institution
    Motorola Inc., Le Grand Saconnex, Switzerland
  • Volume
    22
  • Issue
    5
  • fYear
    2001
  • fDate
    5/1/2001 12:00:00 AM
  • Firstpage
    245
  • Lastpage
    247
  • Abstract
    This paper presents a compact model for metal oxide semiconductor (MOS) capacitors, based on a time-dependent solution for the surface potential. This enables modeling of the frequency dependence of MOS capacitors, which is not possible with existing compact models. The model is implemented in Verilog-A, and is verified against two-dimensional (2-D) numerical device simulations with DESSIS.
  • Keywords
    MOS capacitors; electronic engineering computing; semiconductor device models; surface potential; varactors; 2D numerical device simulations; DESSIS; MOS capacitors; Verilog-A implementation; frequency dependence; surface potential based compact model; time-dependent compact model; Capacitance; Circuit optimization; Equations; Frequency dependence; MOS capacitors; MOSFET circuits; Silicon; Tuning; Varactors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.919243
  • Filename
    919243
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1474167