Title :
Analysis of doped layer step waveguides using dark modes
Author :
Chandler, Peter J. ; Lama, Francesco L. ; Townsend, Peter D. ; Zhang, Lin
Author_Institution :
Sch. of Math. & Phys. Sci., Sussex Univ., Brighton, UK
fDate :
6/1/1990 12:00:00 AM
Abstract :
Results for the analysis of index profiles in steplike waveguide layers formed by proton exchange in LiNbO3 and epitaxially grown Ge-doped quartz are presented. Modeling of the profile with real modes is difficult unless many modes propagate. However, an analysis which includes the substrate modes recorded in dark mode measurements greatly increases the data and hence the confidence in the model of the index profile. Analysis using a reflectivity function provides the required precision. The data demonstrate that the epitaxial GeO2 -doped layer has an index variation with depth
Keywords :
germanium compounds; optical waveguide theory; refractive index; silicon compounds; Ge-doped quartz; LiNbO3; SiO2:Ge; SiO2:GeO2; dark mode measurements; dark modes; depth; doped layer step waveguides; epitaxially grown; index profiles; index variation; proton exchange; reflectivity function; steplike waveguide layers; substrate modes; Helium; Laser beams; Laser modes; Optical waveguides; Planar waveguides; Protons; Reflectivity; Semiconductor process modeling; Substrates; Waveguide lasers;
Journal_Title :
Lightwave Technology, Journal of
