DocumentCode :
1474412
Title :
CMOS differential-capacitance-to-frequency converter utilising repetitive charge integration and charge conservation
Author :
Lee, Hongseok ; Woo, J.-K. ; Kim, Sungho
Author_Institution :
Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Volume :
46
Issue :
8
fYear :
2010
Firstpage :
567
Lastpage :
569
Abstract :
A low-complexity CMOS circuit is proposed for reading out monolithically integrated differential capacitive sensors. It directly converts the differential capacitance of a MEMS sensing device to a frequency by accumulating the charges produced by repeated charge integration and charge conservation. A prototype chip has been designed and fabricated in 0.35 m CMOS technology. Experimental results show that differential capacitance is linearly converted to output frequency.
Keywords :
CMOS integrated circuits; capacitive sensors; frequency convertors; micromechanical devices; monolithic integrated circuits; CMOS differential-capacitance-to-frequency converter; CMOS technology; MEMS sensing device; charge conservation; low-complexity CMOS circuit; monolithically integrated differential capacitive sensors; repetitive charge integration; size 0.35 mum;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2010.3416
Filename :
5451010
Link To Document :
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