Title :
Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers
Author :
Ramadan, Ahmed ; Reveyrand, Tibault ; Martin, Andrew ; Nebus, J.M. ; Bouysse, Philippe ; Lapierre, L. ; Villemazet, J.F. ; Forestier, S.
Author_Institution :
C2S2 Dept., XLIM, Limoges, France
Abstract :
This presented study focuses on the impact of gate-source voltage waveforms on power added efficiency performances of GaN HEMTs for the design of class F and class F-1 amplifiers. It is shown that second-harmonic signal injection at the gate port of transistors can lead to efficiency improvements in the case of class F operation and efficiency deteriorations in the case of class F-1 operation. This work is applied to a 15 W GaN HEMT die from Cree at a fundamental frequency Fo equal to 2 GHz. Calibrated on-wafer time domain measurements are reported.
Keywords :
UHF power amplifiers; UHF transistors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; F-1 GaN power amplifiers; GaN; GaN HEMT; classes F GaN power amplifiers; frequency 2 GHz; fundamental frequency; gate-source voltage waveforms; on-wafer time domain measurement calibration; power 15 W; power added efficiency; second-harmonic injection effect; second-harmonic signal injection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0392
