Title : 
60-110 GHz low loss HDI transitions for LCP-packaged silicon substrate
         
        
            Author : 
Chung, D.J. ; Papapolymerou, John
         
        
            Author_Institution : 
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
         
        
        
        
        
        
        
            Abstract : 
Wideband 3D transitions from 60 to 110 GHz using 50 m via technology on liquid crystal polymer (LCP) are presented. A conductor backed coplanar waveguide (CBCPW) transition on a homogeneous LCP sample shows less than 0.8 dB loss from 60 to 110 GHz. In addition, a CBCPW-to-CBCPW and a CBCPW-to-CPW transition on LCP bonded to silicon substrate are presented also in the range 60-110 GHz. The CBCPW-to-CBCPW transition shows less than 0.5 dB loss up to 100 GHz. The CBCPW-to-CPW transition yields less than 1 dB loss up to 110 GHz. These transitions are the first characterisation of vias in organic substrate packaged silicon in the 60-110 GHz frequency range.
         
        
            Keywords : 
coplanar waveguides; elemental semiconductors; integrated circuit interconnections; liquid crystal polymers; silicon; waveguide transitions; CBCPW transition; HDI transitions; LCP-packaged silicon substrate; conductor backed coplanar waveguide transition; frequency 60 GHz to 110 GHz; liquid crystal polymer; organic substrate packaged silicon; size 50 μm; wideband 3D transitions;
         
        
        
            Journal_Title : 
Electronics Letters
         
        
        
        
        
            DOI : 
10.1049/el.2010.0241