Title :
Two-port InGaAsP/InP square resonator microlasers
Author :
Che, K.-J. ; Lin, J.-D. ; Huang, Yong-Zhen ; Yang, Yue-De ; Du, Yun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
Two-port InGaAsP/InP square resonator microlasers with a side length of 20 m have been fabricated by the planar technology process, which have two 1 m-wide output ports connected to the vertices of the square resonator. Continuous-wave electrically injected microsquare lasers have been realised at room temperature with mode Q-factors of 1.75 ?? 104 at the threshold current.
Keywords :
III-V semiconductors; indium compounds; microcavity lasers; InGaAsP-InP; continuous-wave electrically injected microsquare lasers; mode Q-factors; planar technology process; two-port square resonator microlasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.0588
