DocumentCode
1474494
Title
Characteristics of varactor diodes at low temperatures
Author
Chakraborty, D. ; Coackley, R.
Volume
33
Issue
2
fYear
1967
fDate
5/20/1905 12:00:00 AM
Firstpage
97
Abstract
An experimental investigation of varactor diode junction properties at low temperatures has been performed. Both elemental and compound type diodes have been examined, including two silicon varactors produced by different doping techniques and a diffused mesa-type gallium arsenide varactor. The diode spreading resistance is calculated from Q-factor measurements with an appropriate correction applied for the loss in the measuring line.
Keywords
cryogenics; semiconductor devices; semiconductor diodes; semiconductors;
fLanguage
English
Journal_Title
Radio and Electronic Engineer
Publisher
iet
ISSN
0033-7722
Type
jour
DOI
10.1049/ree.1967.0015
Filename
5267159
Link To Document