DocumentCode
147452
Title
Design and analysis of high speed uni-traveling-carrier photodiodes
Author
Ge Zang ; Yongqing Huang ; Yang Luo ; Xiaofeng Duan ; Xiaomin Ren
Author_Institution
State Key Lab. of Inf. Photonics & Opt. Commun., Beijing Univ. of Posts & Telecommun., Beijing, China
fYear
2014
fDate
27-29 Aug. 2014
Firstpage
1
Lastpage
2
Abstract
In this paper, simulations are conducted to investigate high speed uni-traveling-carrier photodiodes (UTC-PDs). The Gaussian doping profile, which can introduce potential gradient and electric field, is presented to be used in the absorption layer. Compared to constant doping and step-graded doping, bandwidth of UTC-PD with Gaussian doping is improved substantially.
Keywords
doping profiles; integrated optoelectronics; optical communication equipment; optical design techniques; photodiodes; semiconductor doping; Gaussian doping profile; UTC-PD; absorption layer; electric field; high speed unitraveling-carrier photodiodes; Absorption; Bandwidth; Doping profiles; Electric fields; Electric potential; Photodiodes; bandwidth; high speed; photodiode; uni-traveling-carrier;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Internet 2014 (COIN), 2014 12th International Conference on
Conference_Location
Jeju
Type
conf
DOI
10.1109/COIN.2014.6950602
Filename
6950602
Link To Document