DocumentCode :
1474542
Title :
High-gain cascode MMICs in coplanar technology at W-band frequencies
Author :
Tessmann, A. ; Haydl, W.H. ; Hulsmann, A. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Volume :
8
Issue :
12
fYear :
1998
Firstpage :
430
Lastpage :
431
Abstract :
Compact high-gain W-band multistage amplifier MMICs have been developed in coplanar technology using 0.15 μm AlGaAs-InGaAs-GaAs PM-HEMTs. The conventional dual-gate HEMT has been modified to include an additional interstage network between the common-source and the common-gate HEMT. The effect of stabilizing circuit elements has been investigated. A gain of 10 dB per cascode stage is obtained at 94 GHz. Multistage amplifier MMIC´s with up to 40 dB gain have been realized.
Keywords :
HEMT integrated circuits; MMIC amplifiers; circuit stability; coplanar waveguide components; feedback amplifiers; field effect MIMIC; millimetre wave amplifiers; 0.15 micron; 10 to 40 dB; 94 GHz; AlGaAs-InGaAs-GaAs; EHF; MM-wave IC; PHEMT; PM-HEMTs; W-band frequencies; common-gate HEMT; common-source HEMT; coplanar technology; high-gain cascode MMIC; interstage network; multistage amplifier MMIC; pseudomorphic HEMT; stabilizing circuit elements; Capacitance; Circuits; Distributed amplifiers; Feedback; Field effect MMICs; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-noise amplifiers;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.746765
Filename :
746765
Link To Document :
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