Shot Noise in Single-Electron Tunneling Systems: A Semiclassical Model

In this paper, shot noise in single-electron tunneling circuits is studied using a semiclassical approach based on the master equation formalism where the transport through the circuit is modeled as sets of sequential stationary Poisson processes. Analytical expressions for the distribution of time between tunnel events and the resulting power spectral density S(f) are derived. The model is then used to investigate the correlated transfer of electrons and fluctuations in homogeneous long arrays of tunnel junctions.