• DocumentCode
    1474681
  • Title

    Analysis of Magnetic Field and Discharge Plasma for HTS Magnetron Sputtering Apparatus

  • Author

    Qiu, Qingquan ; Xiao, Liye ; Huang, Tianbin ; Zhang, Guomin ; Li, Xiaohang

  • Author_Institution
    Appl. Supercond. Key Lab., Chinese Acad. of Sci., Beijing, China
  • Volume
    20
  • Issue
    3
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    1017
  • Lastpage
    1020
  • Abstract
    The magnetron sputtering apparatus with high magnetic field could be used to fabricate special films. In order to investigate the typical plasma distribution of high field magnetron and further improve the film quality, a newly HTS (high temperature superconductivity) rectangular planar magnetron with racetrack type coil is proposed. The magnetic field in the discharge space is calculated by finite element method, and it is one order higher than that of conventional magnetrons. Based on this, the simulation of magnetron discharge plasma is performed with PIC-MCC (particle-in-cell, Monte Carlo collision) method. The simulation results show that a large electric field region is formed in high magnetic field. Due to the additional electric field, the plasma is broadened to anode direction. Through theoretical analysis, magnetic field and plasma simulation, the disadvantages of current HTS magnetron are further pointed out, and it is discussed how to improve the HTS magnetron.
  • Keywords
    discharges (electric); plasma density; plasma magnetohydrodynamics; plasma materials processing; plasma simulation; plasma transport processes; sputtering; superconducting coils; HTS; discharge plasma; finite element method; high temperature superconductivity; magnetron sputtering apparatus; rectangular planar magnetron; Coating; high temperature superconductivity; magnetic field; magnetron sputtering; plasma;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2010.2044567
  • Filename
    5451076