Title :
High-sensitivity porous silicon photodetectors fabricated through rapid thermal oxidation and rapid thermal annealing
Author :
Lee, M.K. ; Wang, Y.H. ; Chu, C.H.
Author_Institution :
Inst. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fDate :
12/1/1997 12:00:00 AM
Abstract :
The sensitivity of a porous silicon Schottky barrier photodetector is much improved through rapid thermal oxidation and rapid thermal annealing processes. Under our optimum preparation conditions, photocurrent can reach about 21 mA (under 22.4 mW/cm2 tungsten lamp illumination) and dark current is about 5.4 μA (at reverse bias of 10 V). The quantum efficiencies are about 90% at wavelengths shorter than 750 nm and 80%-70% in the wavelength range 750-1050 nm
Keywords :
Schottky diodes; dark conductivity; elemental semiconductors; oxidation; photoconductivity; photodetectors; photodiodes; porous materials; rapid thermal annealing; rapid thermal processing; silicon; 10 V; 21 mA; 5.4 muA; 750 to 1050 nm; 80 to 70 percent; 90 percent; Si; W lamp illumination; dark current; high-sensitivity; optimum preparation conditions; photocurrent; porous Si Schottky barrier photodetector; quantum efficiencies; rapid thermal annealing; rapid thermal oxidation; reverse bias; Lamps; Lighting; Oxidation; Photoconductivity; Photodetectors; Rapid thermal annealing; Rapid thermal processing; Schottky barriers; Silicon; Tungsten;
Journal_Title :
Quantum Electronics, IEEE Journal of
