High-sensitivity porous silicon photodetectors fabricated through rapid thermal oxidation and rapid thermal annealing

Author

Lee, M.K. ; Wang, Y.H. ; Chu, C.H.

Author_Institution

Inst. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

33

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2199

Lastpage

2202

Abstract

The sensitivity of a porous silicon Schottky barrier photodetector is much improved through rapid thermal oxidation and rapid thermal annealing processes. Under our optimum preparation conditions, photocurrent can reach about 21 mA (under 22.4 mW/cm² tungsten lamp illumination) and dark current is about 5.4 μA (at reverse bias of 10 V). The quantum efficiencies are about 90% at wavelengths shorter than 750 nm and 80%-70% in the wavelength range 750-1050 nm

Keywords

Schottky diodes; dark conductivity; elemental semiconductors; oxidation; photoconductivity; photodetectors; photodiodes; porous materials; rapid thermal annealing; rapid thermal processing; silicon; 10 V; 21 mA; 5.4 muA; 750 to 1050 nm; 80 to 70 percent; 90 percent; Si; W lamp illumination; dark current; high-sensitivity; optimum preparation conditions; photocurrent; porous Si Schottky barrier photodetector; quantum efficiencies; rapid thermal annealing; rapid thermal oxidation; reverse bias; Lamps; Lighting; Oxidation; Photoconductivity; Photodetectors; Rapid thermal annealing; Rapid thermal processing; Schottky barriers; Silicon; Tungsten;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.644102

Filename

644102