Title :
YBa2Cu3O7 on Y-stabilized ZrO2 buffered (100) Si-“T” resonator microwave characteristics
Author :
Vlasov, Yuri A. ; Vargas, Jorge M. ; Brown, Philip ; Larkins, Grover L., Jr.
Author_Institution :
Florida Int. Univ., Miami, FL, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
We have successfully fabricated high quality YBa2Cu3O7 microwave “T” resonators on YSZ buffered P-type (100) oriented 53-56 Ω- cm silicon. The 40 to 50 nm thick yttria-stabilized zirconia buffer layer was deposited by pulsed dc magnetron sputtering at 830°C. The 250 to 400 nm thick YBa2Cu3O7 film was deposited using laser ablation at 760°C. Results include Q values in excess of 20,000 at 3.8 GHz on a coplanar “T” resonator at temperatures below 50 K
Keywords :
Q-factor; barium compounds; high-temperature superconductors; pulsed laser deposition; superconducting resonators; superconducting thin films; yttrium compounds; 3.8 GHz; 50 K; 760 C; 830 C; Q-factor; Si; Si(100) substrate; YBa2Cu3O7; YBa2Cu3O7 thin film; YSZ buffer layer; ZrO2-Y2O3; coplanar T-resonator; laser ablation; microwave characteristics; pulsed DC magnetron sputtering; Buffer layers; Laser ablation; Masers; Microwave measurements; Pulsed laser deposition; Silicon; Sputtering; Substrates; Superconducting magnets; Superconducting microwave devices;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
