Title :
Design of 110–152 GHz rotary traveling wave oscillators in 65 nm CMOS technology
Author :
Liangjin Wu ; Sebsebie, Rediet ; Kirkman-Bey, Monique ; Aidoo, Marvin ; Zhijian Xie ; Dogan, Numan S.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina A&T State Univ., Greensboro, NC, USA
Abstract :
A novel rotary traveling wave oscillator (RTWO) is proposed to be an alternative architecture to generate THz signals for long distance high speed communication. As a preliminary work, the design of 110-152 GHz RTWO as the fundamental oscillators is reported in this paper. The transmission line ring, the n-transistor-only cross-coupled inverter pair (CCIP), and the bias-T for the oscillation have been investigated. RTWO with 113 GHz oscillation frequency is designed and layout in TSMC 65 nm CMOS process.
Keywords :
CMOS analogue integrated circuits; coupled transmission lines; field effect MIMIC; millimetre wave oscillators; CCIP; RTWO; THz signal generation; TSMC CMOS process; bias-T; frequency 110 GHz to 152 GHz; fundamental oscillators; long distance high speed communication; n-transistor-only cross-coupled inverter pair; rotary traveling wave oscillator design; size 65 nm; transmission line ring; CMOS integrated circuits; Delays; Radio frequency; Semiconductor device modeling; bias-T; cross-coupled inverter pair (CCIP); rotary traveling wave oscillator (RTWO); transmission line;
Conference_Titel :
SOUTHEASTCON 2014, IEEE
Conference_Location :
Lexington, KY
DOI :
10.1109/SECON.2014.6950662
