A dual band passive RFID design in 0.18µm CMOS technology

Author

Senadeera, Praharshin M. ; Dogan, Numan S. ; Zhijian Xie ; Savci, Huseyin S. ; Kateeb, Ibraheem

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina Agric. & Tech. State Univ., Greensboro, NC, USA

fYear

2014

fDate

13-16 March 2014

Firstpage

1

Lastpage

6

Abstract

This paper presents a novel fully integrated passive X-band RFID transponder, implemented in IBM 0.18-μm RF CMOS technology. The tag was designed to keep the current dissipation in the whole system to a minimum, with special emphasis on RF-DC rectifier and the voltage sensor. Interaction between the building blocks of the RFID tag was investigated and the key design issues addressed in this paper include the design of low-power RFID building blocks. The simulation results demonstrated that the proposed low-power RFID transponder can properly operate under very low input power as well as complying with the universal RFID communication standard.

Keywords

CMOS integrated circuits; low-power electronics; radiofrequency identification; radiofrequency integrated circuits; sensors; transponders; IBM RF CMOS technology; RF-DC rectifier; dual band passive RFID design; fully integrated X-band transponder; low-power design; radiofrequency identification building blocks; size 0.18 mum; universal communication standard; voltage sensor; CMOS integrated circuits; CMOS technology; Oscillators; Radio frequency; Radiofrequency identification; Rectifiers; Transponders; Injection lock LC oscillator; On-chip Antennas; RC oscillator; RF CMOS; RF-DC rectifier; Radio Frequency Identification (RFID); X-band; X-band power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

SOUTHEASTCON 2014, IEEE

Conference_Location

Lexington, KY

Type

conf

DOI

10.1109/SECON.2014.6950663

Filename

6950663