DocumentCode :
1475127
Title :
Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High- 
Gate Stacks
Author :
Crespo-Yepes, A. ; Martin-Martinez, J. ; Rothschild, A. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
Volume :
31
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
543
Lastpage :
545
Abstract :
The reversibility of the gate dielectric breakdown (DB) in ultrathin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery.
Keywords :
MOSFET; electric breakdown; high-k dielectric thin films; MOSFET; circuit functionality; circuit simulator; dielectric recovery; digital circuits; gate dielectric breakdown; ultrathin high-k gate stacks; CMOS circuits; DB reversibility; dielectric breakdown (DB); high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2045732
Filename :
5451150
Link To Document :
