• DocumentCode
    1475127
  • Title

    Recovery of the MOSFET and Circuit Functionality After the Dielectric Breakdown of Ultrathin High- k Gate Stacks

  • Author

    Crespo-Yepes, A. ; Martin-Martinez, J. ; Rothschild, A. ; Rodriguez, R. ; Nafria, M. ; Aymerich, X.

  • Author_Institution
    Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain
  • Volume
    31
  • Issue
    6
  • fYear
    2010
  • fDate
    6/1/2010 12:00:00 AM
  • Firstpage
    543
  • Lastpage
    545
  • Abstract
    The reversibility of the gate dielectric breakdown (DB) in ultrathin high-k dielectric stacks is reported and analyzed. The electrical performance of MOSFETs after the dielectric recovery is modeled and introduced in a circuit simulator. The simulation of several digital circuits shows that their functionality can be restored after the DB recovery.
  • Keywords
    MOSFET; electric breakdown; high-k dielectric thin films; MOSFET; circuit functionality; circuit simulator; dielectric recovery; digital circuits; gate dielectric breakdown; ultrathin high-k gate stacks; CMOS circuits; DB reversibility; dielectric breakdown (DB); high-$k$; resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2045732
  • Filename
    5451150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1475127