Numerical simulation of broad-area high-power semiconductor laser amplifiers

Author

Dai, Zheng ; Michalzik, Rainer ; Unger, Peter ; Ebeling, Karl J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

33

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2240

Lastpage

2254

Abstract

A comprehensive model is presented to study the electrical, thermal, and optical behavior of broad-area traveling-wave InGaAs-AlGaAs semiconductor amplifiers. Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal lensing and optically induced nonlinearities. A self-consistent iteration is developed to simulate the beam filamentation in broad-area semiconductor amplifiers with residual facet reflectivities. The experimentally observed periodic filamentation with intensity minima close to zero is investigated numerically

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; iterative methods; laser beams; laser theory; reflectivity; semiconductor device models; semiconductor lasers; thermal blooming; InGaAs-AlGaAs; beam filamentation; beam propagation method; broad-area high-power semiconductor laser amplifiers; broad-area semiconductor amplifiers; broad-area traveling-wave InGaAs-AlGaAs semiconductor amplifiers; carrier transport mechanisms; comprehensive model; electrical behavior; finite-element thermal analysis; intensity minima; numerical simulation; optical behavior; optically induced nonlinearities; periodic filamentation; residual facet reflectivities; self-consistent iteration; thermal behavior; thermal lensing; Finite element methods; Integrated optics; Laser beams; Laser modes; Numerical simulation; Optical propagation; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Thermal lensing;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.644107

Filename

644107