DocumentCode :
1475244
Title :
SOI: a metamorphosis of silicon
Author :
Cristoloveanu, S.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble
Volume :
15
Issue :
1
fYear :
1999
fDate :
1/1/1999 12:00:00 AM
Firstpage :
26
Lastpage :
32
Abstract :
For the next millennium, SOI offers the opportunity to integrate high-performance and/or innovative devices that can push away the present frontiers of the CMOS down-scaling. SOI will play a significant role in the future of microelectronics if subsisting problems can be rapidly solved. The short-term prospects of SOI-based microelectronics will also closely depend on the penetration rate of LP/LV SOI circuits into the market, A key challenge is associated with the industrial strategy, which must be oriented to overcome the bulk-Si monocultural barrier. Designers, process engineers, and managers are extremely busy loading the bulk-Si machine. When, eventually, they can afford to take a careful look at the assets of SOI technology, they do realize the immediate and long-term benefits offered in terms of performance and scaling extensions. Several companies have already accomplished this step; others will follow soon. SOI should not be regarded as a totally different technology. It is just a metamorphosis of silicon
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; silicon-on-insulator; CMOS down-scaling; LP/LV circuits; SOI; metamorphosis; scaling extensions; Circuits; Dielectric devices; Dielectric materials; Doping; Etching; Explosives; Fabrication; Microelectronics; Semiconductor films; Silicon on insulator technology;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/101.747564
Filename :
747564
Link To Document :
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