DocumentCode :
1475317
Title :
Advanced Materials for Spintronic Based on {\\rm Zn}({\\rm Si,Ge}){\\rm As}_{2} Chalcopyrites
Author :
Fedorchenko, Irina Valentinovna ; Kochura, Alexey V. ; Marenkin, Sergey Fedorovich ; Aronov, Alexey N. ; Koroleva, Ludmila I. ; Kilanski, Lukasz ; Szymczak, Ritta ; Dobrowolski, Witold ; Ivanenko, Sergey ; Lahderanta, E.
Author_Institution :
Kurnakov Inst. of Gen. & Inorg. Chem., Moscow, Russia
Volume :
48
Issue :
4
fYear :
2012
fDate :
4/1/2012 12:00:00 AM
Firstpage :
1581
Lastpage :
1584
Abstract :
AIIBC2V semiconductors doped with Mn are perspective materials for spintronic. Structural, chemical and magnetic properties of these materials have been analyzed. The combinations of these compounds with the traditional semiconductors are perspective to create "system on chip" devices. The coexistence of ferromagnetic and paramagnetic phases was observed. The ferromagnetic phase is likely due to the presence of MnAs nanoclusters (3-5 nm). Paramagnetic properties appear due to Mn complexes (dimmer and trimmer).
Keywords :
X-ray fluorescence analysis; crystal structure; ferromagnetic materials; germanium compounds; magnetisation; manganese; paramagnetic materials; semimagnetic semiconductors; silicon compounds; ternary semiconductors; zinc compounds; Zn(SiGe)As2:Mn; chalcopyrites; chemical properties; ferromagnetic phase; magnetic properties; nanoclusters; paramagnetic phase; spintronics; structural properties; Compounds; Magnetic properties; Magnetic semiconductors; Magnetization; Manganese; Saturation magnetization; Chalcopyrite; diluted magnetic semiconductor; ferromagnetic-semiconductor structure; spintronic;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2011.2175482
Filename :
6172431
Link To Document :
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