DocumentCode :
1475340
Title :
XA readout chip characteristics and CdZnTe spectral measurements
Author :
Barbier, L.M. ; Birsa, F. ; Odom, J. ; Barthelmy, S.D. ; Gehrels, N. ; Krizmanic, J.F. ; Palmer, D. ; Parsons, A.M. ; Stahle, C.M. ; Tueller, J.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Volume :
46
Issue :
1
fYear :
1999
fDate :
2/1/1999 12:00:00 AM
Firstpage :
7
Lastpage :
18
Abstract :
The authors report on the performance of a CdZnTe (CZT) array readout by an XA (X-ray imaging chip produced at the AMS foundry) application specific readout chip (ASIC). The array was designed and fabricated at NASA/Goddard Space Flight Center (GSFC) as a prototype for the Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument. The XA ASIC was obtained from Integrated Detector and Electronics (IDE), in Norway. Performance characteristics and spectral data for 241Am are presented both at room temperature and at -20°C. The measured noise (σ) was 2.5 keV at 60 keV at room temperature. This paper represents a progress report on work with the XA ASIC and CZT detectors. Work is continuing and in particular, larger arrays are planned for future NASA missions
Keywords :
II-VI semiconductors; X-ray detection; application specific integrated circuits; cadmium compounds; gamma-ray detection; semiconductor counters; zinc compounds; ASIC; Burst Arc-Second Imaging and Spectroscopy gamma-ray instrument; CdZnTe; CdZnTe spectral measurements; XA readout chip characteristics; application specific readout chip; Application specific integrated circuits; Detectors; Foundries; NASA; Optical imaging; Prototypes; Semiconductor device measurement; Spectroscopy; Temperature; X-ray imaging;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.747762
Filename :
747762
Link To Document :
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