Theoretical optimization of V-shaped GaInAsP quantum-well lasers grown on InP substrates

Author

Issanchou, O. ; Barrau, J. ; Marie, X. ; Emery, J.-Y. ; Fortin, C. ; Goldstein, L.

Author_Institution

Lab. de Phys. de la matiere Condensee, CNRS, Toulouse, France

Volume

33

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2277

Lastpage

2281

Abstract

Compressively strained GaInAsP quantum wells (QW´s), with a square potential profile and grown on InP substrates, have demonstrated their high potential for the improvement of 1.55-μm lasers. Recently, we have proposed another approach which consists of creating a linear variation of the bandgap inside the well, by means of a linear variation in the As concentration. Calculations show that, in such a V-shaped structure: (1) the effective density of states related to the heavy hole bands is reduced compared to that of a large abrupt-shaped QW and (2) the overlap between the electron and the hole wavefunctions is expected to be greater than in a narrow abrupt-shaped QW. The consequences of these effects are described

Keywords

III-V semiconductors; electronic density of states; energy gap; gallium arsenide; gallium compounds; indium compounds; laser beams; laser theory; optimisation; quantum well lasers; wave functions; 1.55 mum; As concentration; GaInAsP; GaInAsP quantum-well lasers; InP; InP substrates; V-shaped structure; bandgap; compressively strained quantum wells; effective density of states; electron wavefunctions; heavy hole bands; hole wavefunctions; laser characteristics; laser performance; linear variation; square potential profile; theoretical optimization; Capacitive sensors; Charge carrier processes; Gas lasers; Helium; Indium phosphide; Laser theory; Laser transitions; Performance gain; Photonic band gap; Quantum well lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.644110

Filename

644110