Title :
Effect of P-Type Last Barrier on Efficiency Droop of Blue InGaN Light-Emitting Diodes
Author :
Kuo, Yen-Kuang ; Tsai, Miao-Chan ; Yen, Sheng-Horng ; Hsu, Ta-Cheng ; Shen, Yu-Jiun
Author_Institution :
Dept. of Phys., Nat. Changhua Univ. of Educ., Changhua, Taiwan
Abstract :
P-type doping in the last barrier is proposed to improve the efficiency droop of the blue InGaN light-emitting diodes (LEDs). The light-current curves, energy band diagrams, carrier concentrations, radiative recombination efficiency, and internal quantum efficiency of the blue LEDs under study are investigated. The simulation results show that the efficiency droop is significantly improved when the last undoped GaN barrier in a typical blue LED is replaced by a p-type GaN barrier. The simulation results suggest that the improvement in efficiency droop is mainly due to the decrease of electron current leakage and increase of hole injection efficiency.
Keywords :
III-V semiconductors; carrier density; electron-hole recombination; indium compounds; leakage currents; light emitting diodes; semiconductor doping; wide band gap semiconductors; InGaN; LED; blue light emitting diodes; carrier concentration; efficiency droop; electron current leakage; energy band diagram; hole injection efficiency; internal quantum efficiency; last barrier; light-current curve; p-type doping; radiative recombination efficiency; Charge carrier processes; Doping; Electron optics; Gallium nitride; Light emitting diodes; Liquid crystal displays; Numerical simulation; Physics education; Radiative recombination; Spontaneous emission; Efficiency droop; InGaN; light-emitting diodes; numerical simulation;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2045104
