• DocumentCode
    1475522
  • Title

    A Macroscopic Model for First Return Stroke of Lightning

  • Author

    Raysaha, Rosy Balaram ; Kumar, Udaya ; Thottappillil, Rajeev

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Sci., Bangalore, India
  • Volume
    53
  • Issue
    3
  • fYear
    2011
  • Firstpage
    782
  • Lastpage
    791
  • Abstract
    A lightning return stroke model for a downward flash is proposed. The model includes underlying physical phenomena governing return stroke evolution, namely, electric field due to charge distributed along the leader and cloud, transient enhancement of series channel conductance at the bridging regime, and the nonlinear variation of channel conductance, which supports the return stroke current evolution. Thermal effects of free burning arc at the stroke wave front and its impact on channel conductance are studied. A first-order arc model for determining the dynamic channel conductance along with a field-dependent conductivity for corona sheath is used in the model. The model predicts consistent current propagation along the channel with regard to current amplitude and return stroke velocity. The model is also capable of predicting the remote electromagnetic fields that are consistent with the experimental observations.
  • Keywords
    electric admittance; electromagnetic fields; light transmission; lightning; channel conductance; corona sheath; current propagation; dynamic channel conductance; field-dependent conductivity; first return stroke; first-order arc model; lightning return stroke model; macroscopic model; nonlinear variation; remote electromagnetic field; series channel conductance; stroke current evolution; stroke velocity; stroke wave front; transient enhancement; Conductivity; Corona; Electromagnetics; Integrated circuit modeling; Lead; Lightning; Mathematical model; Current evolution; dynamic channel conductance; electromagnetic fields; lightning return stroke;
  • fLanguage
    English
  • Journal_Title
    Electromagnetic Compatibility, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9375
  • Type

    jour

  • DOI
    10.1109/TEMC.2010.2090663
  • Filename
    5734834