Analysis of QD VCSEL Dynamic Characteristics Considering Homogeneous and Inhomogeneous Broadening

Author

Abbaspour, Hadis ; Ahmadi, Vahid ; Yavari, Mohammad Hasan

Author_Institution

Dept. of Electr. Eng., Modares Univ., Tehran, Iran

Volume

17

Issue

5

fYear

2011

Firstpage

1327

Lastpage

1333

Abstract

In this paper, for the first time we present a self-consistent opto-electro-thermal model to analyze the influence of homogeneous and inhomogeneous broadening on the modulation response of 1.3-μm oxide-confined quantum dot InGaAs-GaAs vertical cavity surface emitting laser. In this model, the dependence of 3-dB bandwidth on the self-heating effect is discussed and the influence of inhomogeneous broadening on frequency response is studied. We show that there is an optimized amount of injected current density for the highest maximum bandwidth.

Keywords

III-V semiconductors; current density; frequency response; gallium arsenide; indium compounds; laser cavity resonators; optical modulation; quantum dot lasers; spectral line broadening; surface emitting lasers; InGaAs-GaAs; QD VCSEL dynamics; current density; frequency response; homogeneous broadening; inhomogeneous broadening; modulation response; oxide-confined quantum dot; self-consistent opto-electro-thermal model; self-heating effect; vertical cavity surface emitting laser; wavelength 1.3 mum; Bandwidth; Current density; Equations; Mathematical model; Modulation; Nonhomogeneous media; Vertical cavity surface emitting lasers; Homogeneous and inhomogeneous broadening; modulation response; quantum dot (QD); vertical cavity surface emitting laser (VCSEL);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2011.2107570

Filename

5735154