Title :
Wafer Level High-Speed Germanium Photodiode Array Integration
Author :
Kopp, Christophe ; Ferron, Alexandre ; Hartmann, Jean-Michel ; Fournier, Maryse ; Augendre, Emmanuel ; Grosse, Philippe ; Fedeli, Jean-Marc ; Derks, Henk
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
High-density germanium photodiode arrays are integrated on top of a dummy CMOS 200-mm Silicon wafer. Using a conventional available semiconductor fabrication line, the target specifications are reached with a yield exceeding 99% for several thousands of tested photodiodes with respect to bandwidth, responsivity, and dark current. A very low dark current density in the range of 7 mA/cm2 is obtained. A median bandwidth above 9 GHz is reached with a large 30-μm diameter photodiode.
Keywords :
CMOS integrated circuits; current density; elemental semiconductors; germanium; high-speed integrated circuits; high-speed optical techniques; integrated optics; optical fabrication; photodiodes; CMOS silicon wafer; Ge; Si; bandwidth responsivity; dark current density; high-speed germanium photodiode array integration; median bandwidth; semiconductor fabrication; size 200 mm; size 30 mum; Arrays; Bandwidth; CMOS integrated circuits; Germanium; Photodiodes; Photonics; Silicon; Germanium compounds; hybrid integrated circuit packaging; photodetectors; silicon on insulator technology;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2011.2108639
