Title :
Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact
Author :
Chen, Z.T. ; Fujita, K. ; Ichikawa, J. ; Egawa, T.
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol., Nagoya, Japan
fDate :
5/1/2011 12:00:00 AM
Abstract :
A Pd/InAlN Schottky diode with leakage current as low as 1.01 × 10-6 A/cm2 at -5 V at 300 K has been fabricated. It is found that the current-voltage (I-V) characteristics of Pd/InAlN Schottky contact can be quantitatively described by taking into account the inhomogeneity of Schottky barrier height (SBH), and the SBH inhomogeneity is the main cause for the significant deviation from an ideal Schottky contact. The SBH inhomogeneity is suggested to be related to the quantum dotlike structure on InAlN surface, indicating the importance of surface effect to the investigations on those devices involving InAlN-based Schottky contact.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; indium compounds; leakage currents; palladium; wide band gap semiconductors; Pd-InAlN; SBH inhomogeneity; Schottky barrier height inhomogeneity-induced deviation; Schottky diode; current-voltage characteristics; leakage current; near-ideal Schottky contact; quantum dotlike structure; temperature 300 K; voltage 5 V; Gallium nitride; HEMTs; Leakage current; Nonhomogeneous media; Schottky barriers; Schottky diodes; Temperature measurement; Current–voltage ($I$– $V$); GaN; InAlN; Schottky barrier height (SBH) inhomogeneity; Schottky diode; quantum dot;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2110634
