1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

Author

Chu, Rongming ; Corrion, Andrea ; Chen, Mary ; Li, Ray ; Wong, Danny ; Zehnder, Daniel ; Hughes, Brian ; Boutros, Karim

Author_Institution

HRL Labs., Malibu, CA, USA

Volume

32

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

632

Lastpage

634

Abstract

This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al₂O₃ gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.

Keywords

atomic layer deposition; electric breakdown; field effect transistors; gallium compounds; halides; substrates; Al₂O₃; GaN; GaN-on-Si field-effect transistors; Si substrates; atomic layer deposition; breakdown voltage; gate leakage current; halide-based plasma treatment; high-voltage GaN field-effect transistors; high-voltage operation; low dynamic on-resistance; source electrode; Aluminum gallium nitride; Degradation; FETs; Gallium nitride; Logic gates; Silicon; Switches; Dynamic on-resistance; GaN; field plate; field-effect transistor; gate insulator; power switch;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2118190

Filename

5735179