DocumentCode :
1476253
Title :
Foreword Special Section on Through Silicon Vias
Author :
Kam, Dong Gun ; Kim, Jung-Ho
Volume :
1
Issue :
2
fYear :
2011
Firstpage :
152
Lastpage :
153
Abstract :
The 11 papers in this special section present a snapshot of recent progress in electrical modeling and design of through silicon vias (TSVs) by researchers from both academia and industry. The section is organized into three main areas. The first group of papers deals with the electromagnetic modeling of TSVs. The second group of papers is on the signal integrity and power integrity analysis of TSV interconnections. The third group of papers explores the system architectures and applications that might benefit from the TSV technology.
Keywords :
Special issues and sections; Through-silicon vias;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2011.2116970
Filename :
5735195
Link To Document :
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