Stabilization of n-p-n Transistors

A process for transistor manufacture is described which produces stable leakage currents when junctions are reverse-biased at elevated temperatures. The transistors also have a good gain relationship between 10 mA and 1 ¿A and this relationship is not seriously degraded during ageing. The process produces a low noise figure in the 1/f region which, it is believed, is related ot reliability.