A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC for digital wireless communication

Author

Tham, Joo Leong ; Margarit, Mihai A. ; Pregardier, Bernd ; Hull, Christopher D. ; Magoon, Rahul ; Carr, Frank

Author_Institution

Conexant, Newport Beach, CA, USA

Volume

34

Issue

3

fYear

1999

fDate

3/1/1999 12:00:00 AM

Firstpage

286

Lastpage

291

Abstract

A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC consisting of receive, transmit, and local oscillator (LO) sections is presented. The transmit section achieves an unwanted sideband suppression of -43 dBc, LO leakage of -59 dBc, and third-order spurious rejection of -70 dBc. The transmit output noise level is -165 dBc/Hz at a 20-MHz offset from the carrier. The on-chip very high-frequency oscillator has a phase-noise level of -106 dBc/Hz at 100-kHz offset when operating at 800 MHz. The receive section has 36 dB of gain with 36 dB of gain range in 12-dB steps. The transceiver IC has been fabricated using a 25-GHz f_t silicon bipolar process and is designed to operate over a supply-voltage range of 2.7-5.0 V

Keywords

UHF integrated circuits; bipolar integrated circuits; cellular radio; digital radio; elemental semiconductors; silicon; transceivers; 1.9 GHz; 2.7 to 5 V; 25 GHz; 36 dB; 900 MHz; LO section; Si; Si bipolar process; digital wireless communication; dual-band transceiver IC; local oscillator section; onchip VHF oscillator; phase-noise level; receive section; sideband suppression; third-order spurious rejection; transmit section; Digital integrated circuits; Dual band; GSM; Integrated circuit noise; Local oscillators; Semiconductor device noise; Silicon; Transceivers; Voltage-controlled oscillators; Wireless communication;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.748179

Filename

748179