Title :
GaAs-based near-infrared up-conversion device fabricated by wafer fusion
Author :
Yang, Yi ; Liu, H.C. ; Shen, W.Z. ; Gupta, J.A. ; Luo, Haipeng ; Buchanan, M. ; Wasilewski, Zbigniew R.
Author_Institution :
Dept. of Phys., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
Reported for the first time is a full GaAs-based room-temperature near infrared (NIR) up-conversion device fabricated by wafer-fusing a GaNAsSb/GaAs pin photodetector (PD) with a GaAs/AlGaAs light emitting diode (LED). NIR photons with wavelengths in the range 1.3-1.6 μm were up-converted to 0.87 μm.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; infrared detectors; light emitting diodes; photodetectors; photons; GaAs-AlGaAs; GaNAsSb-GaAs; LED; NIR photons; light emitting diode; near-infrared up-conversion device; pin photodetector; room-temperature near infrared up-conversion device; temperature 293 K to 298 K; wafer fusion; wavelength 0.87 mum; wavelength 1.3 mum to 1.6 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.3543
