Title :
Performance and reliability comparison between asymmetric and symmetric LDD devices and logic gates
Author :
Chen, Jone F. ; Tao, Jiang ; Fang, Peng ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
3/1/1999 12:00:00 AM
Abstract :
The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd, asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared
Keywords :
CMOS logic circuits; MOSFET; carrier lifetime; hot carriers; integrated circuit reliability; logic gates; semiconductor device reliability; NAND structures; NMOSFET; NOR structures; PMOSFET; asymmetric LDD devices; hot-carrier lifetime; hot-carrier reliability; inverter structure; lightly doped drain devices; logic gates; performance comparison; reliability comparison; ring oscillators; symmetric LDD devices; Delay; Hot carriers; Integrated circuit reliability; Inverters; Logic devices; Logic gates; MOS devices; MOSFET circuits; Maintenance; Ring oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
