• DocumentCode
    1476921
  • Title

    InGaAs HEMT with InAs-rich InAlAs barrier spacer for reduced source resistance

  • Author

    Kim, Tae-Woo ; Kim, Do-Hyeon ; del Alamo, Jesus A.

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    47
  • Issue
    6
  • fYear
    2011
  • Firstpage
    406
  • Lastpage
    407
  • Abstract
    An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170 Ω-μm. A 40 nm gate length In0.7Ga0.3As HEMT with Lside=100 nm and tins=10 nm shows excellent transconductance and subthreshold characteristics including gm=1.6 mS/μm, DIBL=122 mV/V and S=80 mV/dec at VDS=0.5 V. In addition, this device exhibits an fT=530 GHz and fmax=445 GHz at VDS=0.7 V. These excellent characteristics mainly arise from a reduction in the source resistance through the use of the InAs-rich InAlAs spacer.
  • Keywords
    aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; HEMT; In0.52Al0.48As; In0.7Ga0.3As; barrier spacer; frequency 455 GHz; high electron transistors; parasitic resistance reduction; size 10 nm; size 100 nm; size 40 nm; source resistance redcution; voltage 0.5 V; voltage 0.7 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2010.3666
  • Filename
    5735461
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1476921