DocumentCode
1477291
Title
Electrostatically tunable piezoelectric-on- silicon micromechanical resonator for real-time clock
Author
Serrano, Diego E. ; Tabrizian, Roozbeh ; Ayazi, Farrokh
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Volume
59
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
358
Lastpage
365
Abstract
This paper reports on the design, fabrication, and characterization of a small form factor, piezoelectrically transduced, tunable micromechanical resonator for real-time clock (RTC) applications (32.768 kHz). The device was designed to resonate in an out-of-plane flexural mode to simultaneously achieve low-frequency operation and reduced motional resistance in a small die area. Finite element simulations were extensively used to optimize the structure in terms of size, insertion loss, spurious-mode rejection, and frequency tuning. Microresonators with an overall die area of only 350 × 350 μm were implemented on a thin-film AlN on silicon-on-insulator (SOI) substrate with AlN thickness of 0.5 μm, device layer of 1.5 μm, and an electrostatic tuning gap size of 1 μm. A frequency tuning range of 3100 ppm was measured using dc voltages of less than 4 V. This range is sufficient to compensate for frequency variations of the microresonator across temperature from -20°C to 100°C. The device exhibits low motional impedance that is completely independent of the frequency tuning potential. Discrete electronics were used in conjunction with the resonator to implement an oscillator, verifying its functionality as a timing reference.
Keywords
clocks; crystal resonators; finite element analysis; micromechanical resonators; silicon; AlN; DC voltages; RTC; SOI; discrete electronics; electrostatic tunable piezoelectric-on-silicon micromechanical resonator; finite element simulations; frequency 32.768 kHz; frequency tuning; insertion loss; low motional impedance; microresonators; motional resistance reduction; oscillator; out-of-plane fiexural mode; real-time clock; silicon-on-insulator substrate; size 0.5 mum; size 1 mum; spurious-mode rejection; temperature -20 degC to 100 degC; timing reference; Electric potential; Electrodes; Electrostatics; Microcavities; Resonant frequency; Substrates; Tuning;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2012.2204
Filename
6174180
Link To Document