Title :
Low threshold current laser emitting at 637 nm
Author :
Welch, D.F. ; Wang, Tao ; Scifres, D.R.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
4/25/1991 12:00:00 AM
Abstract :
Visible laser diodes operating at 637 nm have been fabricated with tensile strained GaInP multiple quantum well active regions. The threshold current of these lasers are as low as 1.2 kA/cm2. The output from the strained active region is TM polarised.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; semiconductor junction lasers; 637 nm; TM polarised; low-threshold current laser; semiconductors; strained active region; tensile strained GaInP multiple quantum well active regions; threshold current; visible laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910432
