Title :
First digital optical switch based on InP/GaInAsP double heterostructure waveguides
Author :
CAVAILLÈS, J.A. ; Renaud, M. ; Vinchant, J.F. ; Erman, M. ; Svensson, P. ; THYLÉN, L.
Author_Institution :
Lab d´´Electron. Philips, Limeil-Brevannes, France
fDate :
4/25/1991 12:00:00 AM
Abstract :
A Y-junction digital optical switch based on InP/GaInAsP has been realised and operated using either carrier injection or carrier depletion. the switch functions with both TE and TM polarised light. In the case of current injection, 30 mA is enough to obtain a crosstalk up to 20 dB for TM polarisation and 10 dB for TE polarisation.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical switches; optical waveguide components; 30 mA; InP substrate; InP-GaInAsP; TE polarised light; TM polarised light; Y-junction digital optical switch; carrier depletion; carrier injection; crosstalk; double heterostructure waveguides; polarisation independent operation; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910435
