DocumentCode
1477337
Title
First digital optical switch based on InP/GaInAsP double heterostructure waveguides
Author
CAVAILLÈS, J.A. ; Renaud, M. ; Vinchant, J.F. ; Erman, M. ; Svensson, P. ; THYLÉN, L.
Author_Institution
Lab d´´Electron. Philips, Limeil-Brevannes, France
Volume
27
Issue
9
fYear
1991
fDate
4/25/1991 12:00:00 AM
Firstpage
699
Lastpage
700
Abstract
A Y-junction digital optical switch based on InP/GaInAsP has been realised and operated using either carrier injection or carrier depletion. the switch functions with both TE and TM polarised light. In the case of current injection, 30 mA is enough to obtain a crosstalk up to 20 dB for TM polarisation and 10 dB for TE polarisation.
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; optical switches; optical waveguide components; 30 mA; InP substrate; InP-GaInAsP; TE polarised light; TM polarised light; Y-junction digital optical switch; carrier depletion; carrier injection; crosstalk; double heterostructure waveguides; polarisation independent operation; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910435
Filename
74868
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