Array of Two UV-Wavelength Detector Types

Author

Ngu, Yves ; Peckerar, M.C. ; Sander, D. ; Eddy, Charles R., Jr. ; Mastro, Michael A. ; Hite, Jennifer K. ; Holm, R.T. ; Henry, R.L. ; Tuchman, A.

Author_Institution

Microelectron. Div., Device Modeling Group, IBM, Burlington, VT, USA

Volume

57

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1224

Lastpage

1229

Abstract

An approach to fabricate a set of simultaneously operating dual-UV-wavelength detectors is described. The fabrication flow relies on the confined-epitaxy growth method. The confined epitaxial Al_xGa_1-xN-layer stacking approach is used to establish simultaneous multiple UV-wavelength detection. The chosen stoichiometries of specific epitaxial layers set the wavelength sensitivity at approximately 355 nm for pixel A and 320 nm for pixel B. Spectral responsivity plots of the detectors clearly show the dual-UV-color sensitivity of the pair. The detectors have signal-to-noise ratios of 15 and 17 and spectral responsivity values of 0.12 AAV and 0.05 AAV for pixel A and pixel B, respectively.

Keywords

aluminium compounds; gallium compounds; semiconductor epitaxial layers; ultraviolet detectors; wide band gap semiconductors; Al_xGa_1-xN; confined epitaxial Al_xGa_1-xN-layer stacking approach; dual-UV-color sensitivity; dual-UV-wavelength detectors; epitaxial layers; signal-to-noise ratios; spectral responsivity; wavelength sensitivity; Aluminum alloys; Detectors; Fabrication; Gallium alloys; Heterojunctions; Laboratories; Leak detection; Leakage current; Object detection; Semiconductor materials; Sensor arrays; Substrates; Solid-state imagers; UV imaging; wide band-gap semiconductor applications;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2045706

Filename

5453058