Assessment of TFT amplifiers for a-Si:H PIXEL particle detectors

Author

Cho, G. ; Conti, M. ; Drewery, J.S. ; Fujieda, I. ; Kaplan, S.N. ; Perez-Mendez, V. ; Qureshi, S. ; Street, R.A.

Author_Institution

Lawrence Berkeley Lab., CA, USA

Volume

37

Issue

3

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

1142

Lastpage

1148

Abstract

The application of thin-film electronics technology to making a signal amplifier and readout circuit for amorphous silicon pixel particle detectors which can detect minimum ionizing particles has been investigated. Characteristics of currently available TFTs (thin film transistors) are reviewed, and preliminary designs of a-Si:H and poly-Si amplifiers for a 300-μm×300-μm pixel array are proposed. Based on the measurement of small signal parameters and the noise spectrum of individual a-Si:H and poly-Si TFTs, the overall gain, time-response and signal-to-noise ratio are calculated

Keywords

amorphous semiconductors; amplification; elemental semiconductors; hydrogen; pulse amplifiers; silicon; thin film devices; thin film transistors; 300 micron; Si:H; a-Si:H; amorphous Si:H pixel particle detectors; gain; minimum ionizing particles; noise spectrum; poly-Si amplifiers; readout circuit; semiconductor; signal amplifier; signal-to-noise ratio; small signal parameters; thin film transistor amplifiers; time-response; Amorphous silicon; Noise measurement; Radiation detectors; Semiconductor thin films; Signal to noise ratio; Spatial resolution; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.57356

Filename

57356