Title :
A Compact Ku-Band SiGe Power Amplifier MMIC With On-Chip Active Biasing
Author :
Noh, Y.S. ; Uhm, M.S. ; Yom, I.B.
Author_Institution :
Satellite & Wireless Convergence Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
6/1/2010 12:00:00 AM
Abstract :
A Ku-band power amplifier monolithic microwave integrated circuit (MMIC) with an output power density of 726 mW/mm2 is demonstrated using 0.25 ??m SiGe BiCMOS technology. No inductor matching scheme is applied to minimize the MMIC size, but an active biasing topology is used to enhance the power-added efficiency (PAE) and linearity of the MMIC. The fabricated one-stage cascode power amplifier MMIC, including input/output matching and biasing circuits, has a compact size of 0.384 mm2 (0.6 mm ?? 0.64 mm), and exhibits a saturated output power (Psat) of 24.45 dBm and a PAE of 29.1 % at 14 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; BiCMOS technology; MMIC; PAE; SiGe; compact ku-band power amplifier; inductor matching scheme; monolithic microwave integrated circuit; on-chip active biasing; one-stage cascode power amplifier fabrication; output power density; power-added efficiency; size 0.25 mum; Cascode; Ku-band; heterojunction bipolar transistor (HBT); power amplifier (PA); silicon germanium (SiGe);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2047530
