DocumentCode :
1477715
Title :
Charge carrier transport properties in thallium bromide crystals used as radiation detectors
Author :
Olschner, F. ; Toledo-Quinones, M. ; Shah, K.S. ; Lund, J.C.
Author_Institution :
Radiat. Monitoring Devices Inc., Watertown, MA, USA
Volume :
37
Issue :
3
fYear :
1990
fDate :
6/1/1990 12:00:00 AM
Firstpage :
1162
Lastpage :
1164
Abstract :
The authors report on measurements of the two most important transport parameters, the mobility μ and the mean trapping time τ for electrons and holes, in TlBr crystals prepared in the laboratory. The results using the transient charge technique are presented along with the data obtained by the pulse height spectrum analysis. The values of (μτ)e and (μτ)h measured for TlBr are still lower than those reported for more established detector materials such as CdTe and HgI2. It is noted, however, that purer TlBr exhibited somewhat improved transport characteristics, implying that μτ may still be impurity-limited. For this reason, future improvements in purification will probably yield detectors having improved charge carrier transport
Keywords :
carrier mobility; electrical conductivity of crystalline semiconductors and insulators; electron traps; hole traps; semiconductor counters; semiconductor materials; thallium compounds; TlBr crystals; charge carrier transport; electrons; holes; mean trapping time; mobility; pulse height spectrum analysis; purification; semiconductor; transient charge technique; Charge carrier processes; Charge carriers; Charge measurement; Crystalline materials; Crystals; Current measurement; Electron mobility; Equations; Pulse measurements; Radiation detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.57359
Filename :
57359
Link To Document :
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